Photoinduced dehydrogenation of defects in undoped -Si:H using positron annihilation spectroscopy

Physical Review Letters

Volumn 84, Issue 4, 2000, Pages 769-772

  Zou, X ^a   Chan, Y C ^a   Webb, P D ^a   Lam, Y W ^a   Hu, Y F ^b   Beling, C D ^b   Fung, S ^b   Weng, H M ^c  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000224753     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.84.769     Document Type: Article

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