Positron depth profiling of the structural and electronic structure transformations of hydrogenated Mg-based thin films

Journal of Applied Physics

Volumn 105, Issue 4, 2009, Pages

  Eijt, S W H ^a   Kind, R ^a   Singh, S ^a   Schut, H ^a   Legerstee, W J ^a   Hendrikx, R W A ^b   Svetchnikov, V L ^c   Westerwaal, R J ^d   Dam, B ^d  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^d VU UNIVERSITY AMSTERDAM   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRONIC STRUCTURE; ELECTRONS; GAS PERMEABLE MEMBRANES; HEAT TREATMENT; HYDRIDES; HYDROGEN; HYDROGENATION; INERT GASES; LITHIUM BATTERIES; METAL RECOVERY; PALLADIUM; PHASE INTERFACES; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON ALLOYS; SORPTION; STEEL SHEET; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

BI LAYERS; CAP LAYERS; COLUMNAR GRAINS; DEPTH PROFILES; ELECTRON MOMENTUM DENSITIES; ELEVATED TEMPERATURES; FILM STUDIES; HIGHEST TEMPERATURES; HYDROGEN CYCLING; HYDROGEN DISSOCIATIONS; HYDROGEN LOADINGS; HYDROGEN SENSORS; HYDROGEN SORPTIONS; INERT GAS; METAL HYDRIDES; METAL-HYDRIDE SYSTEMS; METAL-TO-INSULATOR TRANSITIONS; MG ALLOYS; MG FILMS; NI FILMS; PD CATALYSTS; PHASE EVOLUTIONS; REHYDROGENATION; STRUCTURE TRANSFORMATIONS; SWITCHABLE MIRRORS; THIN CAPPING; X- RAY DIFFRACTIONS;

DEPTH PROFILING;

EID: 61449105817     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3075762     Document Type: Article

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