Hydrogen in a-Si:H deposited by an expanding thermal plasma: A temperature, growth rate and isotope study

Materials Research Society Symposium - Proceedings

Volumn 507, Issue , 1999, Pages 529-534

  Kessels, W M M ^a   Van De Sanden, M C M ^a   Severens, R J ^a   Van Ijzendoorn, L J ^a   Schram, D C ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; AMORPHOUS SILICON; DEUTERIUM; HYDROGEN; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

ATOMIC HYDROGEN INTERACTION; ELASTIC COIL DETECTION;

SEMICONDUCTING SILICON;

EID: 0032670658     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)