Anisotropic characteristics and morphological control of silicon nanowires fabricated by metal-assisted chemical etching

Journal of Materials Science

Volumn 48, Issue 4, 2013, Pages 1755-1762

  Liu, Kong ^a   Qu, Shengchun ^a   Zhang, Xinhui ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AG PARTICLES; ALKALINE SOLUTIONS; ANODIC ETCHING; DEVICE APPLICATION; FEASIBLE SOLUTION; HIGH ASPECT RATIO; LENGTH CONTROL; LOW COST FABRICATION; METAL-ASSISTED CHEMICAL ETCHING; MICROSTRUCTURE SILICON; MORPHOLOGICAL CONTROL; ROOM TEMPERATURE; SELF-ELECTROPHORESIS; SHORT PERIODS; SI SUBSTRATES; SILICON NANOWIRES; SIMPLE METHOD; TOP-DOWN FABRICATION;

ANISOTROPY; ASPECT RATIO; ELECTROPHORESIS; METALS; NANOWIRES; SILICON; SILVER;

ELECTROCHEMICAL ETCHING;

EID: 84871772971     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-012-6936-7     Document Type: Article

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