Photoluminescent n-type porous silicon fabricated in the dark

Advanced Materials

Volumn 20, Issue 16, 2008, Pages 3165-3168

  Li, Shi Qiang ^a   Wijesinghe, T L Sudesh L ^a   Blackwood, Daniel J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ABS RESINS; ATOMS; CONCENTRATION (PROCESS); COPPER; ELECTROCHEMICAL ELECTRODES; EPOXY RESINS; ETHANOL; HOLE CONCENTRATION; OHMIC CONTACTS; PHOSPHORUS; PLATINUM; POROUS SILICON; RESINS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; WIRE;

COPPER WIRES; CURRENT FLOWS; FRONT FACES; LATERAL POTENTIALS; MESH COUNTERS; SILICON SUBSTRATES; WORKING ELECTRODES;

SUBSTRATES;

EID: 54949087514     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200800090     Document Type: Article

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