Narrow-width effect on high-frequency performance and RF noise of sub-40-nm multifinger nMOSFETs and pMOSFETs

IEEE Transactions on Electron Devices

Volumn 60, Issue 1, 2013, Pages 109-116

  Yeh, Kuo Liang ^a,b   Guo, Jyh Chyurn ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Silicon Motion Technology Corporation   (Taiwan)

Author keywords

fMAX; fT; multifinger; nanoscale CMOS; narrow width; NFmin; Rg; RF noise

Indexed keywords

MULTIFINGERS; NANOSCALE CMOS; NARROW WIDTH; NFMIN; RG; RF NOISE;

CMOS INTEGRATED CIRCUITS; NANOTECHNOLOGY;

MOSFET DEVICES;

EID: 84871760126     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2228196     Document Type: Article

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