TED control technology for suppression of reverse narrow channel effect in 0.1 μm MOS devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 227-230

  Ono, Atsuki ^a   Ueno, Ryuichi ^a   Sakai, Isami ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

REVERSE NARROW CHANNEL EFFECTS (RNCE); SHALLOW TRENCH ISOLATION (STI); TRANSIENT ENHANCED DIFFUSION (TED);

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; GATES (TRANSISTOR);

MOSFET DEVICES;

EID: 84886448060     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)