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Volumn 18, Issue 1, 2005, Pages 63-68

Enhancement of CMOS performance by process-induced stress

Author keywords

CMOS; STI; Stress

Indexed keywords

COMPRESSIVE STRESS; DATA ACQUISITION; MOSFET DEVICES; NITRIDES; SILICON WAFERS; TENSILE STRESS;

EID: 13844275613     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2004.841831     Document Type: Article
Times cited : (41)

References (7)
  • 1
    • 0033325124 scopus 로고    scopus 로고
    • NMOS drive current reduction caused by transistor layout and trench isolation induced stress
    • G. Scott, J. Lutze, M. Rubin, F. Nouri, and M. Manley, "NMOS drive current reduction caused by transistor layout and trench isolation induced stress," Tech. Dig. IEDM, pp. 827-830, 1999.
    • (1999) Tech. Dig. IEDM , pp. 827-830
    • Scott, G.1    Lutze, J.2    Rubin, M.3    Nouri, F.4    Manley, M.5
  • 2
    • 0033351004 scopus 로고    scopus 로고
    • Suicide induced pattern density and orientation dependent transconductance in MOS transistor
    • A. Steegen, M. Stucchi, A. Lauwers, and K. Maex, "Suicide induced pattern density and orientation dependent transconductance in MOS transistor," Tech. Dig. IEDM, pp. 497-500, 1999.
    • (1999) Tech. Dig. IEDM , pp. 497-500
    • Steegen, A.1    Stucchi, M.2    Lauwers, A.3    Maex, K.4
  • 7
    • 0031632521 scopus 로고    scopus 로고
    • Local mechanical stress induced defects for Ti and Co/Ti silicidation in sub-0.25 um MOS-technologies
    • A. Steegen, I. De Wolf, and K. Maex, "Local mechanical stress induced defects for Ti and Co/Ti silicidation in sub-0.25 um MOS-technologies," in Symp. VLSI Tech., 1998, pp. 200-201.
    • (1998) Symp. VLSI Tech. , pp. 200-201
    • Steegen, A.1    De Wolf, I.2    Maex, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.