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Applied Physics Letters

Volumn 101, Issue 26, 2012, Pages

Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

(5) Goh, E S M a Yang, H Y a Han, Z J b Chen, T P c Ostrikov, K b

a SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN (Singapore)

b CSIRO (Australia)

c NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER RECOMBINATION; DEEP DEFECTS; DOPANT SOURCES; EMISSION INTENSITY; EMISSION WAVELENGTH; HIGH ENERGY EFFICIENCY; INDIUM TIN OXIDE; LED DEVICE; METAL INCORPORATION; MG CONCENTRATIONS; NEAR-ULTRAVIOLET REGIONS; RADIATIVE RECOMBINATION; ROOM TEMPERATURE; SPECTRAL REGION; SPECTRAL TUNABILITY; THERMALLY ACTIVATED; ZNMGO;

ELECTROLUMINESCENCE; ENERGY EFFICIENCY; GALLIUM NITRIDE; INDIUM; TIN;

LIGHT EMITTING DIODES;

EID: 84871758832 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4773367 Document Type: Article

Times cited : (18)

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