Electroluminescence of ZnO-based semiconductor heterostructures

Quantum Electronics

Volumn 41, Issue 1, 2011, Pages 4-7

  Novodvorsky, O A ^a   Lotin, A A ^a   Panchenko, V Ya ^a   Parshina, L S ^a   Khaidukov, E V ^a   Zuev, D A ^a   Khramova, O D ^a  

^a INSTITUTE ON LASER AND INFORMATION TECHNOLOGIES   (Russian Federation)

Author keywords

Light emitting hetero structures; Pulsed laser deposition; Zinc oxide

Indexed keywords

CARRIER CONFINEMENTS; DOUBLE HETEROSTRUCTURES; GAN LEDS; GAN LIGHT-EMITTING DIODES; HETEROSTRUCTURES; LASER DEPOSITIONS; LUMINESCENCE INTENSITY; PEAK EMISSION WAVELENGTH; SEMICONDUCTOR HETEROSTRUCTURES; ZNO;

CRYSTALS; ELECTROLUMINESCENCE; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; PULSED LASER DEPOSITION; SEMICONDUCTOR LASERS; ZINC; ZINC OXIDE;

PULSED LASERS;

EID: 79955599614     PISSN: 10637818     EISSN: None     Source Type: Journal    
DOI: 10.1070/QE2011v041n01ABEH014421     Document Type: Article

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