Edge-emitting ultraviolet n-ZnO:Al/i-ZnO/pGaN heterojunction light-emitting diode with a rib waveguide

Optics Express

Volumn 18, Issue 4, 2010, Pages 3687-3692

  Liang, H K ^a   Yu, S F ^a   Yang, H Y ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT; LIGHT EMITTING DIODES; LUMINESCENCE; POLARIZATION; VACUUM APPLICATIONS; ZINC OXIDE;

EMISSION INTENSITY; EMISSION PEAKS; FILTERED CATHODIC VACUUM ARC TECHNIQUES; GOOD CORRELATIONS; LOW DEPOSITION TEMPERATURE; RIB WAVEGUIDES; TM POLARIZATION; ZNO; ZNO LAYERS;

WAVEGUIDES;

GALLIUM; GALLIUM NITRIDE; ZINC OXIDE;

ARTICLE; CHEMISTRY; ELECTRODE; EQUIPMENT; EQUIPMENT DESIGN; ILLUMINATION; INSTRUMENTATION; REFRACTOMETRY; SEMICONDUCTOR;

ELECTRODES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; LIGHTING; REFRACTOMETRY; SEMICONDUCTORS; ZINC OXIDE;

EID: 77149136399     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.003687     Document Type: Article

References (11)

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