I-V characteristics of antiparallel resistive switches observed in a single Cu/TaOx/Pt cell

IEEE Electron Device Letters

Volumn 34, Issue 1, 2013, Pages 108-110

  Liu, Tong ^a   Verma, Mohini ^a   Kang, Yuhong ^a   Orlowski, Marius K ^a  

^a Virginia Polytechnic Institute and State University   (United States)

Author keywords

Antiparallel resistive switch (APS); conductive filament (CF); oxygen vacancy

Indexed keywords

ABSOLUTE VALUES; ANTIPARALLEL RESISTIVE SWITCH (APS); CONDUCTIVE FILAMENTS; ELECTRO REDUCTION; ELECTROCHEMICAL FORMATION; HIGH-RESISTANCE STATE; IV CHARACTERISTICS; LOW-RESISTANCE STATE; NEGATIVE BIAS; POSITIVE BIAS; SET OPERATION; SET VOLTAGE;

ELECTROLYTIC REDUCTION; OXYGEN VACANCIES; PLATINUM; SOLID ELECTROLYTES; SWITCHING SYSTEMS;

BIAS VOLTAGE;

EID: 84871756368     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2222631     Document Type: Article

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