메뉴 건너뛰기




Volumn 33, Issue 3, 2012, Pages 429-431

Switching characteristics of antiparallel resistive switches

Author keywords

Antiparallel; electrochemical; resistive switch; TaO x

Indexed keywords

ANTIPARALLEL; BRIDGE FORMATION; ELECTROCHEMICAL; I - V CURVE; IV CHARACTERISTICS; OHM'S LAW; SWITCHING CHARACTERISTICS; TAO X; VOLTAGE WINDOW;

EID: 84857451063     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2179913     Document Type: Article
Times cited : (30)

References (8)
  • 2
    • 0032510985 scopus 로고    scopus 로고
    • A defect-tolerant computer architecture: Opportunities for nanotechnology
    • DOI 10.1126/science.280.5370.1716
    • J. R. Heath, P. J. Kuekes, G. S. Snider, and R. S. Williams, "A defect-tolerant computer architecture: Opportunities for nanotechnology," Science, vol. 280, no. 5370, pp. 1716-1721, Jun. 1998. (Pubitemid 28283489)
    • (1998) Science , vol.280 , Issue.5370 , pp. 1716-1721
    • Heath, J.R.1    Kuekes, P.J.2    Snider, G.S.3    Williams, R.S.4
  • 3
    • 77950852717 scopus 로고    scopus 로고
    • Memristive switches enable 'stateful' logic operations via material implication
    • Apr.
    • J. Borghetti, G. S. Snider, P. J. Kuekes, J. J. Yang, D. R. Stewart, and R. S. Williams, "Memristive switches enable 'stateful' logic operations via material implication," Nature, vol. 464, no. 7290, pp. 873-876, Apr. 2010.
    • (2010) Nature , vol.464 , Issue.7290 , pp. 873-876
    • Borghetti, J.1    Snider, G.S.2    Kuekes, P.J.3    Yang, J.J.4    Stewart, D.R.5    Williams, R.S.6
  • 5
    • 77951622926 scopus 로고    scopus 로고
    • Complementary resistive switches for passive nancrossbar memories
    • May
    • E. Linn, R. Rosezin, C. Kugeler, and R. Waser, "Complementary resistive switches for passive nancrossbar memories," Nat. Mater., vol. 9, no. 5, pp. 403-406, May 2010.
    • (2010) Nat. Mater. , vol.9 , Issue.5 , pp. 403-406
    • Linn, E.1    Rosezin, R.2    Kugeler, C.3    Waser, R.4
  • 6
    • 84857454853 scopus 로고    scopus 로고
    • Program and erase operation of a floating electrode bi-resistive device using compliance current constraint
    • submitted for publication
    • Y. Kang, T. Liu, and M. Orlowski, "Program and erase operation of a floating electrode bi-resistive device using compliance current constraint," IEEE Trans. Electron Devices, submitted for publication.
    • IEEE Trans. Electron Devices
    • Kang, Y.1    Liu, T.2    Orlowski, M.3
  • 7
    • 80155127190 scopus 로고    scopus 로고
    • Symmetric charge-flux nonlinearity with combined inherently-asymmetric memristors
    • F. Corinto, A. Ascoli, and M. Gilli, "Symmetric charge-flux nonlinearity with combined inherently-asymmetric memristors," in Proc. 20th ECCTD, 2011, pp. 632-635.
    • (2011) Proc. 20th ECCTD , pp. 632-635
    • Corinto, F.1    Ascoli, A.2    Gilli, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.