-
1
-
-
18844382348
-
Non-volatile memory based on solid electrolytes
-
Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004
-
M. N. Kozicki, C. Gopalan, M. Balakrishnan, M. Park, and M. Mitkova, "Non-volatile memory based on solid electrolytes," in Proc. NVMTS, 2004, pp. 10-17. (Pubitemid 40690672)
-
(2004)
Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004
, pp. 10-17
-
-
Kozicki, M.N.1
Gopalan, C.2
Balakrishnan, M.3
Park, M.4
Mitkova, M.5
-
2
-
-
0032510985
-
A defect-tolerant computer architecture: Opportunities for nanotechnology
-
DOI 10.1126/science.280.5370.1716
-
J. R. Heath, P. J. Kuekes, G. S. Snider, and R. S. Williams, "A defect-tolerant computer architecture: Opportunities for nanotechnology," Science, vol. 280, no. 5370, pp. 1716-1721, Jun. 1998. (Pubitemid 28283489)
-
(1998)
Science
, vol.280
, Issue.5370
, pp. 1716-1721
-
-
Heath, J.R.1
Kuekes, P.J.2
Snider, G.S.3
Williams, R.S.4
-
3
-
-
77950852717
-
Memristive switches enable 'stateful' logic operations via material implication
-
Apr.
-
J. Borghetti, G. S. Snider, P. J. Kuekes, J. J. Yang, D. R. Stewart, and R. S. Williams, "Memristive switches enable 'stateful' logic operations via material implication," Nature, vol. 464, no. 7290, pp. 873-876, Apr. 2010.
-
(2010)
Nature
, vol.464
, Issue.7290
, pp. 873-876
-
-
Borghetti, J.1
Snider, G.S.2
Kuekes, P.J.3
Yang, J.J.4
Stewart, D.R.5
Williams, R.S.6
-
4
-
-
77951576344
-
Learning abilities achieved by a single solid-state atomic switch
-
Apr.
-
T. Hasegawa, T. Ohno, K. Terabe, T. Tsuruoka, T. Nakayama, J. K. Gimzewski, and M. Aono, "Learning abilities achieved by a single solid-state atomic switch," Adv. Mater., vol. 22, no. 16, pp. 1831-1834, Apr. 2010.
-
(2010)
Adv. Mater.
, vol.22
, Issue.16
, pp. 1831-1834
-
-
Hasegawa, T.1
Ohno, T.2
Terabe, K.3
Tsuruoka, T.4
Nakayama, T.5
Gimzewski, J.K.6
Aono, M.7
-
5
-
-
77951622926
-
Complementary resistive switches for passive nancrossbar memories
-
May
-
E. Linn, R. Rosezin, C. Kugeler, and R. Waser, "Complementary resistive switches for passive nancrossbar memories," Nat. Mater., vol. 9, no. 5, pp. 403-406, May 2010.
-
(2010)
Nat. Mater.
, vol.9
, Issue.5
, pp. 403-406
-
-
Linn, E.1
Rosezin, R.2
Kugeler, C.3
Waser, R.4
-
6
-
-
84857454853
-
Program and erase operation of a floating electrode bi-resistive device using compliance current constraint
-
submitted for publication
-
Y. Kang, T. Liu, and M. Orlowski, "Program and erase operation of a floating electrode bi-resistive device using compliance current constraint," IEEE Trans. Electron Devices, submitted for publication.
-
IEEE Trans. Electron Devices
-
-
Kang, Y.1
Liu, T.2
Orlowski, M.3
-
7
-
-
80155127190
-
Symmetric charge-flux nonlinearity with combined inherently-asymmetric memristors
-
F. Corinto, A. Ascoli, and M. Gilli, "Symmetric charge-flux nonlinearity with combined inherently-asymmetric memristors," in Proc. 20th ECCTD, 2011, pp. 632-635.
-
(2011)
Proc. 20th ECCTD
, pp. 632-635
-
-
Corinto, F.1
Ascoli, A.2
Gilli, M.3
-
8
-
-
47249166433
-
A Ta2O5 solid-electrolyte switch with improved reliability
-
T. Sakamoto, N. Banno, N. Iguchi, H. Kawaura, H. Sunamura, S. Fujieda, K. Terabe, T. Hasegawa, and M. Aono, "A Ta2O5 solid-electrolyte switch with improved reliability," in VLSI Symp. Tech. Dig., 2007, pp. 38-39.
-
(2007)
VLSI Symp. Tech. Dig.
, pp. 38-39
-
-
Sakamoto, T.1
Banno, N.2
Iguchi, N.3
Kawaura, H.4
Sunamura, H.5
Fujieda, S.6
Terabe, K.7
Hasegawa, T.8
Aono, M.9
|