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Journal of Materials Science

Volumn 48, Issue 2, 2013, Pages 750-757

Thickness optimized nanocrystalline ZnO-coated silicon nanowires for cold cathode application

(3) Das, N S a Banerjee, D a Chattopadhyay, K K a

a JADAVPUR UNIVERSITY (India)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED; CARBON-BASED NANOSTRUCTURES; COLD CATHODE APPLICATIONS; COLD CATHODES; EMISSION PERFORMANCE; FIELD EMISSION PROPERTY; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; FIELD EMITTER; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; MORPHOLOGICAL INFORMATION; NANOCRYSTALLINES; NANOSTRUCTURED THIN FILM; P-TYPE SI; PHOTOLUMINESCENCE SPECTRUM; RADIO FREQUENCY MAGNETRON SPUTTERING; SI NANOWIRE; SILICON NANOWIRES; SURFACE DEFECT STATE; VALENCE STATE; VERTICALLY ALIGNED; ZNO; ZNO LAYERS; ZNO NANOPARTICLES;

CATHODES; COATINGS; COLD CATHODE TUBES; FIELD EMISSION; NANOCRYSTALLINE SILICON; NANOWIRES; OPTIMIZATION; PHOTOELECTRONS; PHOTOLUMINESCENCE; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

SILICON WAFERS;

EID: 84871614281 PISSN: 00222461 EISSN: 15734803 Source Type: Journal
DOI: 10.1007/s10853-012-6791-6 Document Type: Article

Times cited : (12)

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