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Journal of Materials Chemistry

Volumn 22, Issue 4, 2012, Pages 1527-1531

Logic inverters based on the property modulated Si nanowires by controlled surface modifications

(4) Moon, Kyeong Ju a Lee, Tae Il a Lee, Woong b Myoung, Jae Min a

a Yonsei University (South Korea)

b Changwon National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DILUTE HF SOLUTIONS; ELECTROLESS; HIGH YIELD; MICROSTRUCTURAL EXAMINATION; N-TYPE CONDUCTIVITY; OUTER SURFACE; POLY(4-VINYLPHENOL); SI NANOWIRE; SI WAFER; SILICON NANOWIRES; TREATMENT PROCESS;

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC PROPERTIES; HYDROFLUORIC ACID; LOGIC DEVICES; NANOWIRES; PHOSPHORUS COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SILICON; SILICON WAFERS; SURFACE DEFECTS;

SURFACE TREATMENT;

EID: 84855399636 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c1jm14719f Document Type: Article

Times cited : (5)

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