One-step growth and Field emission properties of SnO2-capped silicon nanowires: A Sn-catalyzed approach

Journal of Physical Chemistry C

Volumn 113, Issue 16, 2009, Pages 6450-6453

  Chi, Hang ^a   Zhu, Hui Chao ^a   Xu, Hong Jun ^a   Shan, Xu Dong ^a   Liao, Zhi Min ^a   Yu, Da Peng ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION EFFECT; CATALYZED REACTIONS; CHEMICAL VAPOR DEPOSITION METHODS; COMPONENT MODEL; FIELD EMISSION DEVICES; FIELD EMISSION MEASUREMENTS; FIELD EMISSION PROPERTY; FOWLER-NORDHEIM; HIGH YIELD; MOTION OF ELECTRONS; NANOWIRE STRUCTURES; OXIDE-ASSISTED GROWTHS; SEM; SI NANOWIRE; SILICON NANOSTRUCTURES; SILICON NANOWIRES; TEM; TURN-ON FIELD; UNIFORM DISTRIBUTION; VAPOR-LIQUID-SOLID;

ADSORPTION; ARCHITECTURAL ACOUSTICS; ELECTRIC WIRE; EMISSION SPECTROSCOPY; FIELD EMISSION; NANOWIRES; SCANNING ELECTRON MICROSCOPY; TIN; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

CHEMICAL VAPOR DEPOSITION;

EID: 67049160505     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp810543f     Document Type: Article

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