Band gap widening of nanocrystalline nickel oxide thin films via phosphorus doping

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 5, 2010, Pages 1377-1382

  Das, N S ^a   Saha, B ^a   Thapa, R ^a   Das, G C ^a   Chattopadhyay, K K ^a  

^a JADAVPUR UNIVERSITY   (India)

Author keywords

NiO; Optical properties; Phosphorus doping; Sputtering

Indexed keywords

ARGON ATMOSPHERES; ATOMIC FORCE; BAND GAP WIDENING; BAND GAPS; CRYSTALLINITIES; MICROSCOPIC MEASUREMENT; MORPHOLOGICAL INFORMATION; NANO-CRYSTALLINE NICKEL; NANOCRYSTALLINES; NIO FILMS; NIO THIN FILM; PHASE FORMATIONS; PHOSPHORUS DOPING; PHOSPHORUS-DOPED; RADIO FREQUENCY MAGNETRON SPUTTERING; SILICON SUBSTRATES; SPECTROPHOTOMETRIC MEASUREMENTS; SPECTROSCOPIC STUDIES; UV-VIS-NIR; X-RAY DIFFRACTION STUDIES; X-RAY PHOTOELECTRONS;

ARGON; BINDING ENERGY; DOPING (ADDITIVES); ENERGY GAP; NANOCRYSTALLINE SILICON; NICKEL OXIDE; OXIDE FILMS; PHOSPHORUS; SPECTROSCOPIC ANALYSIS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

OPTICAL PROPERTIES;

EID: 77349099684     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.11.047     Document Type: Article

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