Influence of TiO2 nanoparticles on IMC growth in Sn-3.0Ag-0.5Cu-xTiO2 solder joints in reflow process

Journal of Alloys and Compounds

Volumn 554, Issue , 2013, Pages 195-203

  Tang, Y ^a,b   Li, G Y ^a   Pan, Y C ^a  

^a SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

^b ZHONGKAI UNIVERSITY OF AGRICULTURE AND ENGINEERING   (China)

Author keywords

IMC grain; Intermetallic growth; Lead free solder; Ripening; TiO2 nanoparticles addition

Indexed keywords

ATOMIC INTERDIFFUSION; COPPER SUBSTRATES; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; GRAIN SIZE; GROWTH EXPONENT; HETEROGENEOUS NUCLEATION; IMC LAYER; INTERMETALLIC GROWTH; LEAD FREE SOLDERS; REFLOW PROCESS; RIPENING; SN-3.0AG-0.5CU; SOLDER JOINTS; SOLDERING REACTIONS; TIO; WEIGHT PERCENTAGES;

ADSORPTION; CURVE FITTING; ENERGY DISPERSIVE SPECTROSCOPY; GRAIN GROWTH; GRAIN SIZE AND SHAPE; GROWTH KINETICS; INTERMETALLICS; KINETICS; NANOPARTICLES; OSTWALD RIPENING; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; SOLDERED JOINTS; SOLDERING; SOLDERING ALLOYS; TIN; TITANIUM DIOXIDE; X RAY DIFFRACTION ANALYSIS;

SILVER;

EID: 84871449932     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.12.019     Document Type: Article

References (21)

1. G.Y. Li, X.D. Bi, Q. Chen, and X.Q. Shi J. Electron. Mater. 40 2011 165
2. John H.L. Pang, Luhua Xu, X.Q. Shi, W. Zhou, and S.L. Ngoh J. Electron. Mater. 33 2004 1219
3. B.L. Chen, and G.Y. Li IEEE Trans. Compon. Packag. Technol. 28 2005 534
4. G. Zings, S.B. Xue, L. Zhang, L.L. Gao, W. Dai, and J.D. Luo J. Mater. Sci.-Mater. Electron. 21 2010 421
5. G.Y. Li, B.L. Chen, X.Q. Shi, Stephen C.K. Wong, and Z.F. Wang Thin Solid Films 504 2006 421
6. D.Q. Yu, and L. Wang J. Alloys Comp. 458 2008 542
7. Y.G. Lee, and J.G. Duh J. Mater. Sci.-Mater. Electron. 10 1999 33
8. G.Y. Li, B.L. Chen, and J.N. Tey IEEE Trans. Electron. Packag. Manuf. 27 2004 77
9. B.L. Chen, and G.Y. Li Thin Solid Films 462-463 2004 395
10. K. Bukat, M. Koscielski, J. Sitek, M. Jakubowska, and A. Mlozniak Solder. Surf. Mt. Tech. 23 2011 150
11. Y.D. Han, S.M.L. Nai, H.Y. Jing, L.Y. Xu, C.M. Tan, and J. Wei J. Mater. Sci.-Mater. Electron. 22 2011 315
12. J. Shen, Y.C. Liu, Y.J. Han, Y.M. Tian, and H.X. Gao Mater. Sci. Eng., A 441 2006 135
13. D.C. Lin, G.X. Wang, T.S. Srivastna, M. Al-Hajri, and M. Patraroli Mater. Lett. 53 2002 333
14. D.C. Lin, S. Liu, T.M. Guo, G.X. Wang, T.S. Srivastna, and M. Patraroli Mater. Sci. Eng., A 360 2003 285
15. L.C. Tsao, S.Y. Chang, C.I. Lee, W.H. Sun, and C.H. Huang Mater. Des. 31 2010 4831
16. L.C. Tsao, C.H. Huang, C.H. Chung, and R.S. Chen Mater. Sci. Eng., A 545 2012 194
17. L.C. Tsao, M.W. Wu, and S.Y. Chang J. Mater. Sci.-Mater. Electron. 23 2012 681
18. S.Y. Chang, C.C. Jain, T.H. Chuang, L.P. Feng, and L.C. Tsao Mater. Des. 32 2011 4720
19. L.C. Tsao, and S.Y. Chang Mater. Des. 31 2010 990
20. G.Y. Li, and B.L. Chen IEEE Trans. Compon. Packag. Technol. 26 2003 651
21. J. Sigelko, S. Choi, K.N. Subramanian, and J.P. Lucas J. Electron. Mater. 29 2000 1307