Scaling properties in transistors that use aligned arrays of single-walled carbon nanotubes

Nano Letters

Volumn 10, Issue 2, 2010, Pages 499-503

  Ho, Xinning ^a   Ye, Lina ^a   Rotkin, Slava V ^b   Cao, Qing ^a   Unarunotai, Sakulsuk ^a   Salamat, Shuaib ^c   Alam, Muhammad A ^c   Rogers, John A ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b LEHIGH UNIVERSITY   (United States)

^c Purdue University   (United States)

Author keywords

Carbon nanotube; Gigahertz; Quartz; Radio frequency; Transistor

Indexed keywords

ALIGNED ARRAYS; CHANNEL LENGTH; DEVICE PROPERTIES; GATE VOLTAGES; RADIO FREQUENCY TRANSISTORS; SCALING PROPERTIES; SINGLE TUBES; SOURCE AND DRAINS; SYSTEMATIC INVESTIGATIONS; TEST STRUCTURE; THIN FILM SEMICONDUCTORS;

CARBON NANOTUBES; CONTACT RESISTANCE; ELECTRONIC EQUIPMENT TESTING; OXIDE MINERALS; PALLADIUM; QUARTZ; RADIO; RADIO WAVES; SINGLE-WALLED CARBON NANOTUBES (SWCN);

TRANSISTORS;

EID: 76749152409     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl903281v     Document Type: Article

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