Enhanced dielectric properties of Pb0.92La0.08 Zr0.52Ti0.48O3 films with compressive stress

Journal of Applied Physics

Volumn 112, Issue 11, 2012, Pages

  Ma, Beihai ^a   Liu, Shanshan ^a   Tong, Sheng ^a,b   Narayanan, Manoj ^a   Balachandran, U ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b 705 Engineering Research Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN STRENGTHS; CHEMICAL SOLUTION DEPOSITION; COERCIVE ELECTRIC FIELD; CONDUCTIVE OXIDES; DIELECTRIC BREAKDOWN STRENGTH; PLATINIZED SILICON; PLZT; PLZT FILMS; ROOM TEMPERATURE; WEIBULL ANALYSIS;

COMPRESSIVE STRESS; DEPOSITS; DIELECTRIC LOSSES; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC PROPERTIES; LEAD; NICKEL; RESIDUAL STRESSES; SUBSTRATES; X RAY DIFFRACTION; ZIRCONIUM;

FERROELECTRIC FILMS;

EID: 84871223797     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4768926     Document Type: Article

References (33)

1. 3 ferroelectric ceramics for electrooptic applications.," J. Am. Ceram. Sci. 54, 1-11 (1971). 10.1111/j.1151-2916.1970.tb12105.x-i1
2. J. F. Scott and C. A. Araujo, " Ferroelectric memories.," Science 246, 1400-1405 (1989). 10.1126/science.246.4936.1400
3. K. Uchiyama, A. Kasamatsu, Y. Otani, and T. Shiosaki, " Electro-optic properties of lanthanum-modified lead zirconate titanate thin films epitaxially grown by the advanced sol-gel method.," Jpn. J. App. Phys. 46, L244-L246 (2007). 10.1143/JJAP.46.L244
4. B. Guttler, U. Bismayer, P. Groves, and E. Salje, " Fatigue mechanisms in thin film PZT memory materials.," Semicond. Sci. Technol. 10, 245-248 (1995). 10.1088/0268-1242/10/3/002
5. B. Ma, D. K. Kwon, M. Narayanan, and U. Balachandran, " Dielectric properties of PLZT film-on-foil capacitors.," Mater. Lett. 62, 3573-3575 (2008). 10.1016/j.matlet.2008.03.060
6. M. D. Losego, L. H. Jimison, J. F. Ihlefeld, and J-P. Maria, " Ferroelectric response from lead zirconate titanate thin films prepared directly on low-resistivity copper substrates.," Appl. Phys. Lett. 86, 172906 (2005). 10.1063/1.1919388
7. S. Kandasamy, M. K. Ghantasala, A. Holland, Y. X. Li, V. Bliznyuk, W. Wlodarski, and A. Mitchell, " Heat treatment effects on the formation of lanthanum-modified lead zirconate titanate THIN films.," Mater. Lett. 62, 370-373 (2008). 10.1016/j.matlet.2007.05.050
8. J. Ihlefeld, B. Laughlin, A. Hunt-Lowery, W. Borland, A. Kingon, and J. P. Maria, " Copper Compatible Barium Titanate Thin Films for Embedded Passives.," J. Electroceram. 14, 95-102 (2005). 10.1007/s10832-005-0866-6
9. A. I. Kingon and S. Srinivasan, " Lead zirconate titanate thin films directly on copper electrodes for ferroelectric, dielectric and piezoelectric applications.," Nat. Mater. 4, 233-237 (2005). 10.1038/nmat1334
10. H.-J. Zhao, T.-L. Ren, N.-X. Zhang, R.-Z. Zuo, X.-H. Wang, L.-T. Liu, Z.-J. Li, Z.-L. Gui, and L.-T. Li, " Preparation and properties of PLZT thick films on silicon.," Mater. Sci. Eng. B 99, 195-198 (2003). 10.1016/S0921-5107(02)00518-4
11. L. B. Kong and J. Ma, " Preparation and characterization of antiferroelectric PLZT2/95/5 thin Films via a sol-gel process.," Mater. Lett. 56, 30-37 (2002). 10.1016/S0167-577X(02)00412-3
12. 3-coated steel substrates.," Appl. Phys. Lett. 79, 4204-4206 (2001). 10.1063/1.1426695
13. R. G. Polcawich, C.-N. Feng, S. Kurtz, S. Perini, P. J. Moses, and S. Trolier-McKinstry, " AC and DC electrical stress reliability of piezoelectric lead zirconate titanate (PZT) thin films.," Int. J. Microcircuits Electron. Packag. 23, 85-91 (2000).
14. 3 thin films.," Science 306, 1005 (2004). 10.1126/science.1103218
15. 3 films by inducing permanent compressive stress.," Appl. Phys. Lett. 88, 072908 (2006). 10.1063/1.2174094
16. 3," Nature 430, 758-761 (2004). 10.1038/nature02773
17. F. Xu, S. Trolier-McKinstry, W. Ren, B. Xu, Z.-L. Xie, and K. J. Hemker, " Domain wall motion and its contribution to the dielectric and piezoelectric properties of lead zirconate titanate films.," J. Appl. Phys. 89, 1336-1348 (2001). 10.1063/1.1325005
18. B. Ma, M. Narayanan, and U. Balachandran, " Dielectric strength and reliability of ferroelectric PLZT films deposited on nickel substrates.," Mater. Lett. 63, 1353-1356 (2009). 10.1016/j.matlet.2009.03.021
19. B. Ma, S. Tong, M. Narayanan, S. Liu, S. Chao, and U. Balachandran, " Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils.," Mater. Res. Bull. 46, 1124-1129 (2011). 10.1016/j. materresbull.2011.02.047
20. S. Liu, B. Ma, M. Narayanan, S. Chao, R. E. Koritala, and U. Balachandran, " Improved properties of barium strontium titanate thin films grown on copper foils by pulsed laser deposition using a self-buffered layer.," J. Phys. D: Appl. Phys. 45, 175304 (2012). 10.1088/0022-3727/45/ 17/175304
21. 3 buffer layers.," Appl. Phys. Lett. 78, 1282-1284 (2001). 10.1063/1.1350425
22. P. S. Prevéy, " X-ray diffraction residual stress techniques.," Metals Handbook (American Society for Metals, 1986), pp. 380-392.
23. J. Zacharias, " The temperature dependence of Young's modulus for nickel.," Phys. Rev. 44, 116-122 (1933). 10.1103/PhysRev.44.116
24. J. Merker and D. Lupton, " High temperature mechanical properties of the platinum group metals.," Platinum Met. Rev. 45, 74-82 (2001).
25. M. A. Hopcroft, W. D. Nix, and T. W. Kenny, " What is the Young's modulus of silicon.," J. Microelectromech. Syst. 19, 229-238 (2010). 10.1109/JMEMS.2009.2039697
26. 3 films grown on Si substrate.," J. Phys. D: Appl. Phys. 41, 195407 (2008). 10.1088/0022-3727/41/19/195407
27. R. J. Ong, D. A. Payne, and N. R. Sottos, " Processing effect for Integrated PZT: Residual stress, thickness, and dielectric properties.," J. Am. Ceram. Soc. 88, 2839 (2005). 10.1111/j.1551-2916.2005.00641.x
28. 3/Pt thin-film stacks for integrated ferroelectric capacitors.," J. Appl. Phys. 78, 1926 (1995). 10.1063/1.360230
29. J.-W. Lee, C.-S. Park, M. Kim, and H.-E. Kim, " Effects of residual stress on the electrical properties of PZT.," J. Am. Ceram. Soc. 90, 1077-1080 (2007). 10.1111/j.1551-2916.2007.01610.x
30. K. Jonscher, Dielectric Relaxation in Solids (Chelsea Dielectrics Press, London 1983).
31. W. Weibull, " A statistical distribution function of wide applicability.," J. Appl. Mech. 18, 293-297 (1951).
32. L. A. Dissado, " Theoretical basis for the statistics of dielectric breakdown.," J. Phys. D: Appl. Phys. 23, 1582-1591 (1990). 10.1088/0022-3727/23/12/015
33. See, for example, D. J. Smith, Reliability, Maintainability and Risk: Practical Methods for Engineers (Newnes, 2001).