Preparation and characterization of antiferroelectric PLZT2/95/5 thin films via a sol-gel process

Materials Letters

Volumn 56, Issue 1-2, 2002, Pages 30-37

  Kong, L B ^a   Ma, J ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Antiferroelectric; Lead lanthanum zirconate titanate

Indexed keywords

ANNEALING; DIELECTRIC LOSSES; FERROELECTRIC MATERIALS; FERROELECTRIC THIN FILMS; GRAIN SIZE AND SHAPE; HYSTERESIS; PERMITTIVITY; PEROVSKITE; PHASE TRANSITIONS; POLARIZATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING LEAD COMPOUNDS; SOL-GELS;

HYSTERESIS LOOPS;

ANTIFERROELECTRIC MATERIALS;

EID: 0036742060     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(02)00412-3     Document Type: Article

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