Role of surface composition in morphological evolution of GaAs nano-dots with low-energy ion irradiation

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages 1-8

  Kumar, Tanuj ^a   Kumar, Manish ^a   Gupta, Govind ^b   Pandey, Ratnesh Kumar ^c   Verma, Shammi ^a   Kanjilal, Dinakar ^a  

^a INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^b NATIONAL PHYSICAL LABORATORY   (India)

^c UNIVERSITY OF ALLAHABAD   (India)

Author keywords

AFM; Ion irradiation; Nano dots; XPS

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; ION BEAMS; ION BOMBARDMENT; IONS; NANODOTS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING GALLIUM; SPECTRAL DENSITY; SURFACE DIFFUSION; VALENCE BANDS; VANADIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC FORCE MICROGRAPHS; CORE-LEVEL SPECTRA; DIFFUSION PROCESS; ION BEAM IRRADIATION; LOW-ENERGY ION IRRADIATION; MORPHOLOGICAL EVOLUTION; NANO-STRUCTURING; PREFERENTIAL SPUTTERING;

CORE LEVELS;

EID: 84870975144     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-552     Document Type: Article

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