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The phonon spectra of the α-GaSb were compared to phonon spectra of c-GaSb wafers. The deposited α-GaSb films show a broad phonon spectrum characteristic for a noncrystalline solid in contrast to the sharTO- and LO-phonon frequencies at 6.8 and 7.0 THz for c-GaSb. For details of the method see, and, apl APPLAB 0003-6951
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The phonon spectra of the α-GaSb were compared to phonon spectra of c-GaSb wafers. The deposited α-GaSb films show a broad phonon spectrum characteristic for a noncrystalline solid in contrast to the sharp TO- and LO-phonon frequencies at 6.8 and 7.0 THz for c-GaSb. For details of the method see M. Först, T. Dekorsy, C. Trappe, M. Laurenzis, H. Kurz, and M. Bechevet, Appl. Phys. Lett. 77, 1964 (2000). apl APPLAB 0003-6951
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Metal surfaces remain almost crystalline during sputtering at room temperature. For the pattern formation it is concluded therefore that ion-induced patterns on metals will reflect the symmetry of the crystal (Ref. 4).
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Metal surfaces remain almost crystalline during sputtering at room temperature. For the pattern formation it is concluded therefore that ion-induced patterns on metals will reflect the symmetry of the crystal (Ref. 4).
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