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Volumn 80, Issue 1, 2002, Pages 130-132

Ion-induced formation of regular nanostructures on amorphous GaSb surfaces

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SURFACE LAYERS; LOW-ENERGY AR; MORPHOLOGY EVOLUTION; NORMAL INCIDENCE; SPATIAL EVOLUTION; SPUTTER EROSION;

EID: 79955988602     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1429750     Document Type: Article
Times cited : (88)

References (22)
  • 2
  • 15
    • 79957957481 scopus 로고    scopus 로고
    • Morphology of Ion-Sputtered Surfaces, http://xxx.lanl.gov/abs/ cond-mat/0007354, 2000.
    • M. Makeev, R. Cuerno, and A.-L. Barabási, Morphology of Ion-Sputtered Surfaces, http://xxx.lanl.gov/abs/ cond-mat/0007354, 2000.
    • Makeev, M.1    Cuerno, R.2    Barabási, A.-L.3
  • 16
    • 0001480877 scopus 로고    scopus 로고
    • prb PRBMDO 0163-1829
    • G. Carter, Phys. Rev. B 59, 1669 (1998). prb PRBMDO 0163-1829
    • (1998) Phys. Rev. B , vol.59 , pp. 1669
    • Carter, G.1
  • 17
    • 0015681175 scopus 로고
    • jmt JMTSAS 0022-2461
    • P. Sigmund, J. Mater. Sci. 8, 1545 (1973). jmt JMTSAS 0022-2461
    • (1973) J. Mater. Sci. , vol.8 , pp. 1545
    • Sigmund, P.1
  • 18
    • 0346346460 scopus 로고    scopus 로고
    • The phonon spectra of the α-GaSb were compared to phonon spectra of c-GaSb wafers. The deposited α-GaSb films show a broad phonon spectrum characteristic for a noncrystalline solid in contrast to the sharTO- and LO-phonon frequencies at 6.8 and 7.0 THz for c-GaSb. For details of the method see, and, apl APPLAB 0003-6951
    • The phonon spectra of the α-GaSb were compared to phonon spectra of c-GaSb wafers. The deposited α-GaSb films show a broad phonon spectrum characteristic for a noncrystalline solid in contrast to the sharp TO- and LO-phonon frequencies at 6.8 and 7.0 THz for c-GaSb. For details of the method see M. Först, T. Dekorsy, C. Trappe, M. Laurenzis, H. Kurz, and M. Bechevet, Appl. Phys. Lett. 77, 1964 (2000). apl APPLAB 0003-6951
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 1964
    • Först, M.1    Dekorsy, T.2    Trappe, C.3    Laurenzis, M.4    Kurz, H.5    Bechevet, M.6
  • 22
    • 79957938163 scopus 로고    scopus 로고
    • Metal surfaces remain almost crystalline during sputtering at room temperature. For the pattern formation it is concluded therefore that ion-induced patterns on metals will reflect the symmetry of the crystal (Ref. 4).
    • Metal surfaces remain almost crystalline during sputtering at room temperature. For the pattern formation it is concluded therefore that ion-induced patterns on metals will reflect the symmetry of the crystal (Ref. 4).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.