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Volumn 258, Issue 9, 2012, Pages 4148-4151
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Formation of nanodots on GaAs by 50 keV Ar + ion irradiation
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Author keywords
Atomic force microscopy (AFM); Ripples; Sputtering
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
GALLIUM ARSENIDE;
III-V SEMICONDUCTORS;
ION BOMBARDMENT;
IONS;
NANODOTS;
RAMAN SPECTROSCOPY;
SEMICONDUCTING GALLIUM;
SPUTTERING;
SURFACE ROUGHNESS;
AVERAGE DIAMETER;
FLUENCE RANGE;
IRRADIATED SURFACE;
NANOPATTERNING;
NONLINEAR BEHAVIOR;
RIPPLES;
SEMI-INSULATING GAAS;
SURFACE NORMALS;
VANADIUM COMPOUNDS;
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EID: 84857054457
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2011.07.005 Document Type: Conference Paper |
Times cited : (34)
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References (29)
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