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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 193, Issue 1-4, 2002, Pages 596-602

Evolution of surface morphology of ion sputtered GaAs(1 0 0)

(4) Datta, D a Bhattacharyya, Satya R a Chini, T K a Sanyal, M K a

a SAHA INSTITUTE OF NUCLEAR PHYSICS (India)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DOSIMETRY; ION IMPLANTATION; ISOTOPES; MORPHOLOGY; POSITIVE IONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SPUTTERING; SURFACE ROUGHNESS; SURFACES;

ION SPUTTERING;

ION BOMBARDMENT;

EID: 0036608866 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(02)00860-1 Document Type: Conference Paper

Times cited : (41)

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