Characterization of power electronics system interconnect parasitics using time domain reflectometry

IEEE Transactions on Power Electronics

Volumn 14, Issue 4, 1999, Pages 622-628

  Zhu, Huibin ^a,c   Hefner Jr , Allen R ^b,c   Lai, Jih Sheng ^a,c  

^a State University   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CAPACITORS; ELECTRIC INVERTERS; ELECTROMAGNETIC WAVE INTERFERENCE; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); POWER CONVERTERS; REFLECTOMETERS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); TIME DOMAIN REFLECTOMETRY (TDR);

POWER ELECTRONICS;

EID: 0033153999     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.774198     Document Type: Article

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