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Volumn 97, Issue 20, 2010, Pages

Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties

(4) Klenovsk P a Kapek V a Munzar, D a Humlicek J a

a MASARYK UNIVERSITY (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; EXCITATION POWER; EXPERIMENTAL OBSERVATION; GAAS; HOLE LOCALIZATION; INAS QUANTUM DOTS; PHOTOLUMINESCENCE EMISSION; PIEZO-ELECTRIC FIELDS; RED SHIFT; STRAIN REDUCING LAYERS; VERTICAL ELECTRIC FIELDS;

ELECTRIC FIELDS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; INDIUM ARSENIDE; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTING GALLIUM;

EID: 78649286642 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3517446 Document Type: Article

Times cited : (49)

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