Significant increase in conduction band discontinuity due to solid phase epitaxy of Al2O3 gate insulator films on GaN semiconductor

Applied Physics Letters

Volumn 101, Issue 23, 2012, Pages

  Toyoda, S ^a   Shinohara, T ^a   Kumigashira, H ^b,c   Oshima, M ^a   Kato, Y ^d  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF MATERIALS STRUCTURE SCIENCE   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCEDURES; BAND DISCONTINUITIES; CRYSTALLOGRAPHIC STRUCTURE; GAN CRYSTALS; GATE INSULATOR; INSULATION PERFORMANCE; POLYCRYSTALLINE; SOLID PHASE EPITAXY;

AMORPHOUS FILMS; AMORPHOUS MATERIALS; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM NITRIDE; GRAIN BOUNDARIES; X RAY ABSORPTION SPECTROSCOPY;

ALUMINUM;

EID: 84870866793     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4769818     Document Type: Article

References (23)

1. T. P. Chow, V. Khemka, J. Fedison, N. Ramungui, K. Matocha, Y. Tang, and R. J. Gutmann, Solid-State Electron. 44, 277 (2000). 10.1016/S0038-1101(99) 00235-X
2. J. L. Hudgins, G. S. Simin, E. Santi, and M. A. Khan, IEEE Trans. Power Electron. 18, 907 (2003). 10.1109/TPEL.2003.810840
3. S. Nakamura, Jpn. J. Appl. Phys., Part 2 30, L1705 (1991). 10.1143/JJAP.30.L1705
4. T. Fuji, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 84, 855 (2004). 10.1063/1.1645992
5. T. Lei, M. Fanciulli, R. J. Moinar, T. D. Moustakas, R. J. Graham, and J. Scanion, Appl. Phys. Lett. 59, 944 (1991). 10.1063/1.106309
6. M. H. Kim, Y. C. Bang, N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, Appl. Phys. Lett. 78, 2858 (2001). 10.1063/1.1371539
7. S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Ono, M. Niwa, K. Usuda, and N. Hirashita, Appl. Phys. Lett. 83, 5449 (2003). 10.1063/1.1633977
8. S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda, and K. Usuda, Appl. Phys. Lett. 87, 102901 (2005). 10.1063/1.2035894
9. R. Yasuhara, M. Komatsu, H. Takahashi, S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, D. Kukuruznyak, and T. Chikyow, Appl. Phys. Lett. 89, 122904 (2006). 10.1063/1.2356377
10. S. Toyoda, J. Okabayashi, M. Komatsu, M. Oshima, D. Lee, S. Sun, Y. Sun, P. A. Pianetta, D. Kukuruznyak, and T. Chikyow, J. Vac. Sci. Technol. A 28, 16 (2010). 10.1116/1.3259869
11. S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Yamashita, M. Niwa, K. Usuda, and G. L. Liu, J. Appl. Phys. 97, 104507 (2005). 10.1063/1.1899228
12. J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Usuda, M. Niwa, and G. L. Liu, J. Vac. Sci. Technol. A 23, 1554 (2005). 10.1116/1.2049300
13. A. M. Goodman, J. Appl. Phys. 41, 2176 (1970). 10.1063/1.1659185
14. M. L. Boltz and R. H. French, Appl. Phys. Lett. 55, 1955 (1989). 10.1063/1.102335
15. R. H. French, J. Am. Ceram. Soc. 73, 477 (1990). 10.1111/j.1151-2916. 1990.tb06541.x
16. B. Ealet, M. H. Elyakhloufi, E. Gillet, and M. Ricci, Thin Solid Films 250, 92 (1994). 10.1016/0040-6090(94)90171-6
17. S. Miyazaki, J. Vac. Sci. Technol. B 19, 2212 (2001). 10.1116/1.1418405
18. V. V. Afanasev, M. Houssa, A. Stesmans, and M. M. Heyns, J. Appl. Phys. 91, 3079 (2002). 10.1063/1.1436299
19. C. M. Fang and R. A. de Groot, J. Phys. Condens. Matter 19, 386223 (2007). 10.1088/0953-8984/19/38/386223
20. Y. Hori, C. Mizue, and T. Hashizume, Jpn. J. Appl. Phys., Part 1 49, 080201 (2010). 10.1143/JJAP.49.080201
21. K. Okubo, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima, Appl. Phys. Express 4, 091002 (2011). 10.1143/APEX.4.091002
22. V. V. Afanasev, M. Houssa, A. Stesmans, C. Merckling, T. Schram, and J. A. Kittl, Appl. Phys. Lett. 99, 072103 (2011). 10.1063/1.3623439
23. H. Momida, T. Hamada, Y. Takagi, T. Yamamoto, T. Uda, and T. Ohno, Phys. Rev. B 73, 054108 (2006). 10.1103/PhysRevB.73.054108