Composition dependence of band offsets for (LaAlO3) 1-x(Al2O3)x gate dielectrics determined by photoelectron spectroscopy and x-ray absorption spectroscopy

Applied Physics Letters

Volumn 89, Issue 12, 2006, Pages

  Yasuhara, R ^a   Komatsu, M ^a   Takabashi, H ^a   Toyoda, S ^a   Okabayashi, J ^a   Kumigashira, H ^a   Oshima, M ^a   Kukuruznyak, D ^b   Chikyow, T ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; LSI CIRCUITS; PHOTOELECTRON SPECTROSCOPY; PULSED LASER DEPOSITION; X RAY SPECTROSCOPY;

BAND DIAGRAMS; CORE-LEVEL SPECTRA; GATE DIELECTRICS; X-RAY ABSORPTION SPECTROSCOPY;

LANTHANUM COMPOUNDS;

EID: 33749038899     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2356377     Document Type: Article

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