Dislocation analysis of a new method for growing large-size crystals of monocrystalline silicon using a seed casting technique

Crystal Growth and Design

Volumn 12, Issue 12, 2012, Pages 6144-6150

  Gao, Bing ^a   Nakano, Satoshi ^a   Harada, Hirofumi ^b   Miyamura, Yoshiji ^b   Sekiguchi, Takashi ^b   Kakimoto, Koichi ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATED VALUES; CASTING TECHNIQUES; COOLING FLUX; DISLOCATION DENSITIES; DISLOCATION DISTRIBUTIONS; GROWTH METHOD; INITIAL STAGES; POLYCRYSTALLINE;

CRYSTAL GROWTH; MONOCRYSTALLINE SILICON;

DISLOCATIONS (CRYSTALS);

EID: 84870827877     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg301274d     Document Type: Article

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