Influence of back-diffusion of iron impurity on lifetime distribution near the seed-crystal interface in seed cast-grown monocrystalline silicon by numerical modeling

Crystal Growth and Design

Volumn 12, Issue 1, 2012, Pages 522-525

  Gao, Bing ^a   Nakano, Satoshi ^a   Kakimoto, Koichi ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION DISTRIBUTIONS; DURATION TIME; IRON DISTRIBUTION; IRON IMPURITIES; LIFE-TIME DISTRIBUTION; MINORITY CARRIER LIFETIMES; NUMERICAL MODELING; SILICON MELTS; TIME-DEPENDENT;

CARRIER LIFETIME; CAST IRON; CRYSTAL IMPURITIES; DIFFUSION; IRON; MONOCRYSTALLINE SILICON;

CRYSTAL GROWTH FROM MELT;

EID: 84855384197     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg201465t     Document Type: Article

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