Effect of crucible rotation on oxygen concentration in the polycrystalline silicon grown by the unidirectional solidification method

Journal of Crystal Growth

Volumn 311, Issue 4, 2009, Pages 1051-1055

  Nakano, S ^a   Liu, L J ^a,b   Chen, X J ^a   Matsuo, H ^c   Kakimoto, K ^a,c  

^a KYUSHU UNIVERSITY   (Japan)

^b XI'AN JIAOTONG UNIVERSITY   (China)

^c KYUSHU UNIVERSITY   (Japan)

Author keywords

A1. Computer simulation; A1. Directional solidification; A1. Impurities; B2. Semiconducting silicon; B3. Solar cells

Indexed keywords

COMPUTER SIMULATION; CRUCIBLES; CRYSTALLIZATION; DISSOLUTION; OXYGEN; PHOTOVOLTAIC CELLS; POLYSILICON; ROTATION; SEMICONDUCTING SILICON COMPOUNDS; SOLAR CELLS; SOLIDIFICATION;

A1. COMPUTER SIMULATION; A1. DIRECTIONAL SOLIDIFICATION; A1. IMPURITIES; B2. SEMICONDUCTING SILICON; B3. SOLAR CELLS;

SEMICONDUCTING SILICON;

EID: 60649113194     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.12.020     Document Type: Article

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