Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace

Journal of Crystal Growth

Volumn 352, Issue 1, 2012, Pages 47-52

  Gao, B ^a   Nakano, S ^a   Harada, H ^b   Miyamura, Y ^b   Sekiguchi, T ^b   Kakimoto, K ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

A1. Computer simulation; A1. Directional solidification; B2. Semiconducting silicon; B3. Solar cells

Indexed keywords

CRUCIBLE WALL; CRYSTAL-MELT INTERFACE; ENTHALPY METHOD; NUMERICAL RESULTS; POLYCRYSTALLINE GRAINS; SEEDED GROWTH; THERMAL FLUXES; UNIDIRECTIONAL SOLIDIFICATION;

COMPUTER SIMULATION; MONOCRYSTALLINE SILICON; POLYSILICON; SOLIDIFICATION;

CRUCIBLES;

EID: 84863319334     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.11.084     Document Type: Conference Paper

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