Constitutive modeling of intrinsic and oxygen-contaminated silicon monocrystals in easy glide

Journal of Applied Physics

Volumn 108, Issue 10, 2010, Pages

  Cochard, J ^a   Yonenaga, I ^b   Gouttebroze, S ^c   M'Hamdi, M ^c   Zhang, Z L ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b TOHOKU UNIVERSITY   (Japan)

^c SINTEF MATERIALS AND CHEMISTRY   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTITUTIVE MODELING; DISLOCATION CORE; DISLOCATION LINES; DISLOCATION MULTIPLICATION; EFFECTIVE DENSITY; EXPERIMENTAL OBSERVATION; INFLUENCE OF OXYGEN; MECHANICAL BEHAVIOR; MOBILE DISLOCATIONS; OXYGEN ATOM; OXYGEN CONCENTRATIONS; SILICON BAR; SILICON CRYSTAL; SILICON MONOCRYSTALS; STRESS DISTRIBUTION; TEMPERATURE DEPENDENCIES; UNLOCKING STRESS; UPPER YIELD STRESS;

CRYSTALS; DISLOCATIONS (CRYSTALS); STRAIN RATE; STRESS CONCENTRATION; YIELD STRESS;

DISSOLVED OXYGEN;

EID: 78650258689     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3501021     Document Type: Conference Paper

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