Z2-FET used as 1-transistor high-speed DRAM

European Solid-State Device Research Conference

Volumn , Issue , 2012, Pages 197-200

  Wan, Jing ^a   Le Royer, Cyrille ^b   Zaslavsky, Alexander ^a,c   Cristoloveanu, Sorin ^a  

^a IMEP LAHC   (France)

^b CEA GRENOBLE   (France)

^c Brown University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCESS TIME; CARRIER FLOW; INJECTION BARRIERS; NEW DEVICES; OPERATION MODE; RETENTION TIME; SUBTHRESHOLD SWING; SUPPLY VOLTAGES;

IMPACT IONIZATION;

EID: 84870588028     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2012.6343367     Document Type: Conference Paper

References (17)

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