A compact capacitor-less high-speed DRAM using field effect-controlled charge regeneration

IEEE Electron Device Letters

Volumn 33, Issue 2, 2012, Pages 179-181

  Wan, J ^a   Le Royer, C ^b   Zaslavsky, A ^c   Cristoloveanu, S ^a  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

^c Brown University   (United States)

Author keywords

Capacitor less; dynamic random access memory (DRAM); feedback; high speed

Indexed keywords

BIASING VOLTAGES; CAPACITOR-LESS; DYNAMIC RANDOM ACCESS MEMORY; DYNAMIC RANDOM ACCESS MEMORY (DRAM); FULLY DEPLETED SILICON-ON-INSULATOR; GATE CAPACITORS; HIGH-SPEED; REGENERATION PROCESS; RETENTION TIME;

CAPACITORS; FEEDBACK;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 84856306104     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2176908     Document Type: Article

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