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IEEE Electron Device Letters

Volumn 33, Issue 2, 2012, Pages 161-163

Floating-body diode-a novel DRAM device

(3) Avci, Uygar E a Kencke, David L a Chang, Peter L D a

a INTEL CORPORATION (United States)

Author keywords

DRAM; FinFET; floating body; floating body cell (FBC); silicon on insulator (SOI)

Indexed keywords

CMOS COMPATIBLE; DRAM CELLS; DRAM DEVICES; EMBEDDED MEMORIES; FINFET; FLOATING BODIES; FLOATING-BODY CELL; MEMORY OPERATIONS; OPERATION RANGE; RETENTION TIME; SILICON ON INSULATOR; SILICON-ON-INSULATORS; SOURCE AND DRAINS; UNIT CELLS;

CELLS; COMPUTER SIMULATION; ELECTRIC SWITCHGEAR; INTEGRATED CIRCUITS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 84856296218 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/LED.2011.2177239 Document Type: Article

Times cited : (16)

References (6)

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