A novel capacitor-less DRAM cell using Thin Capacitively-Coupled Thyristor (TCCT)

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 311-314

  Cho, Hyun Jin ^a   Nemati, Farid ^a   Roy, Rich ^a   Gupta, Rajesh ^a   Yang, Kevin ^a   Ershov, Maxim ^a   Banna, Srinivasa ^a   Tarabbia, Marc ^a   Sailing, Craig ^a   Hayes, Dennis ^a   Mittal, Anurag ^a   Robins, Scott ^a  

^a T RAM Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON ON INSULATOR TECHNOLOGY; THYRISTORS;

PROCESS INTEGRATION; THIN CAPACITIVELY-COUPLED THYRISTOR (TCCT);

DYNAMIC RANDOM ACCESS STORAGE;

EID: 33847744630     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.2005.1609337     Document Type: Conference Paper

References (4)

1. T. Ohsawa et al., 2005 ISSCC, pp. 458.
2. R. Ranica et al., 2005 VLSI Tech. Dig., pp. 38.
3. F. Nemati et al., 1999 IEDM Tech. Dig., pp. 283.
4. F. Nemati et al., 2004 IEDM Tech. Dig., pp. 273.