Performance of InGaN/GaN MQW LEDs using Ga-doped ZnO TCLs prepared by ALD

IEEE Photonics Technology Letters

Volumn 24, Issue 23, 2012, Pages 2105-2108

  Yen, Kuo Yi ^a   Chiu, Chien Hua ^a   Li, Chun Wei ^a   Chou, Chien Hua ^a   Lin, Pei Shin ^a   Chen, Tzu Pei ^a   Lin, Tai Yuan ^b   Gong, Jyh Rong ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

ALD; GZO; InGaN GaN multiple quantum well (MQW) light emitting diode (LED); ohmic contact; transparent conducting layer (TCL)

Indexed keywords

ALD; COMMERCIAL GRADE; CONDUCTING LAYERS; FORWARD VOLTAGE; GA-DOPED ZNO; GZO; INDIUM TIN OXIDE; INGAN/GAN; LED STRUCTURE; LIGHT EXTRACTION; LIGHT OUTPUT POWER; SPECIFIC CONTACT RESISTANCES;

ANNEALING; ATOMIC LAYER DEPOSITION; CONDUCTIVE FILMS; GALLIUM NITRIDE; OHMIC CONTACTS; REFRACTIVE INDEX; SEMICONDUCTOR QUANTUM WELLS; TIN; TIN OXIDES; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 84870464955     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2012.2220537     Document Type: Article

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