Electroluminescence from ZnO nanorod/unetched GaN LED wafers under forward and reverse biases

Journal of Optics (United Kingdom)

Volumn 14, Issue 12, 2012, Pages

  Zhang, Lichun ^a   Li, Qingshan ^b   Dong, Yanfeng ^a   Huang, Ruizhi ^b   Zhang, Zhongjun ^b   Zhao, Fengzhou ^b  

^a QUFU NORMAL UNIVERSITY   (China)

^b LUDONG UNIVERSITY   (China)

Author keywords

electroluminescence; light emitting diodes; turn on voltage; ZnO nanorods

Indexed keywords

ETCHING; GALLIUM NITRIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; LIGHT; LIGHT EMITTING DIODES; NANORODS; OXIDE MINERALS; ZINC OXIDE;

ELECTROLUMINESCENCE SPECTRA; GAN-BASED LIGHT-EMITTING DIODES; HIGH BRIGHTNESS LEDS; HYDROTHERMAL METHODS; LIGHT OUTPUT; MULTIQUANTUM WELLS; TURN-ON VOLTAGES; ZNO NANOROD;

ELECTROLUMINESCENCE;

EID: 84870326922     PISSN: 20408978     EISSN: 20408986     Source Type: Journal    
DOI: 10.1088/2040-8978/14/12/125601     Document Type: Article

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