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Applied Physics Letters

Volumn 97, Issue 8, 2010, Pages

Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction

(5) Ahn, Jaehui a Mastro, Michael A b Hite, Jennifer b Eddy, Charles R b Kim, Jihyun a

a Korea University (South Korea)

b NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATING CURRENT; BEHAVIOR CHARACTERISTIC; CURRENT VOLTAGE; DIELECTROPHORETIC FORCES; FINITE ELEMENT CALCULATIONS; FORWARD BIAS; GAN THIN FILMS; METALLIZATIONS; P-N HETEROJUNCTIONS; P-TYPE CONTACT; P-TYPE GAN; PN JUNCTION DIODES; TI/AL/NI/AU; ZNO;

DISTILLATION; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; NANOFLOWERS; VAPOR DEPOSITION; ZINC OXIDE;

THIN FILMS;

EID: 77956193817 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3481415 Document Type: Article

Times cited : (13)

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