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Applied Physics Letters

Volumn 94, Issue 4, 2009, Pages

Exciton recombination in ZnO nanorods grown on GaN/sapphire template

(8) Mohanta, S K a Tripathy, S b Zhang, X H b Kim, D C a Soh, C B b Yong, A M b Liu, W b Cho, H K a

a Sungkyunkwan University (South Korea)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; EXCITONS; LIGHT EMISSION; NANORODS; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

COMPETITIVE EFFECTS; CRYSTALLINE QUALITIES; DECAY TIME; EXCITON RECOMBINATIONS; EXCITONIC EMISSIONS; EXCITONIC TRANSITIONS; GAN/SAPPHIRE; HIGH DENSITIES; LOW TEMPERATURES; NANOROD ARRAYS; NEAR BAND EDGES; NONRADIATIVE RELAXATION PROCESS; P TYPES; PL SPECTROSCOPIES; PL SPECTRUM; RADIATIVE RECOMBINATIONS; TIME-RESOLVED; VARIABLE TEMPERATURES; VERTICALLY ALIGNED; ZNO NANORODS;

LUMINESCENCE;

EID: 59349094979 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3074366 Document Type: Article

Times cited : (15)

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