Theory of gas sensitivity of nanostructured MOX layers: Charge carrier self-exhaustion approach

Sensors and Actuators, B: Chemical

Volumn 175, Issue , 2012, Pages 234-245

  Zaretskiy, N P ^a   Menshikov, L I ^a   Vasiliev, A A ^a  

^a KURCHATOV INSTITUTE   (Russian Federation)

Author keywords

Charge carrier self exhaustion theory; Double Schottky barrier; Humidity; Nanostructured materials; Semiconductor; Sensitivity; Sensors; Surface electron states; Tamm states; Variable range hopping conductivity

Indexed keywords

DOUBLE SCHOTTKY BARRIERS; SENSITIVITY; SURFACE ELECTRON STATE; TAMM STATES; VARIABLE RANGE HOPPING;

ATMOSPHERIC HUMIDITY; GRAIN SIZE AND SHAPE; INERT GASES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SENSORS;

CHARGE CARRIERS;

EID: 84870241137     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2012.08.068     Document Type: Article

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