On the origin of sensing properties of the nanostructured layers of semiconducting metal oxide materials

Sensors and Actuators, B: Chemical

Volumn 170, Issue , 2012, Pages 148-157

  Zaretskiy, N P ^a   Menshikov, L I ^a   Vasiliev, A A ^a  

^a KURCHATOV INSTITUTE   (Russian Federation)

Author keywords

Nanostructured materials; Self exhaustion; Semiconductor; Sensitivity; Sensors; Surface states

Indexed keywords

BULK CONDUCTION; CRITICAL SIZE; ELECTRONEGATIVE GAS; GAS MOLECULES; NANO-STRUCTURED LAYER; NANOPARTICLE DIAMETER; NANOSTRUCTURED METALS; PHYSICAL PHENOMENA; SELF-EXHAUSTION; SEMICONDUCTING METAL OXIDES; SENSING LAYERS; SENSING PROPERTY; SENSITIVITY; SENSOR FABRICATION; SURFACE ELECTRON; SURFACE VACANCIES; THREE ORDERS OF MAGNITUDE;

METALLIC COMPOUNDS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR MATERIALS; SENSORS; SURFACE STATES;

CHEMICAL SENSORS;

EID: 84857161931     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2011.03.064     Document Type: Conference Paper

References (37)

1. J.F. McAleer, P.T. Moseley, J.O.W. Norris, and D.E. Williams Tin dioxide gas sensors J. Chem. Soc., Faraday Trans. 1 83 1987 1323 1346
2. A.A. Vasiliev, D.Yu. Godovski, A.I. Buturlin, and T.A. Gabuzyan Semiconductor sensors for determination of fluorine-containing gas mixtures Sens. Actuators B 13-14 1993 705 707 (Pubitemid 23711635)
3. 2 sensors: current status and future prospects Sens. Actuators B 26-27 1995 1 12
4. M. Miloslavskiy Hall effect in tin dioxide Opt. Spectrosc. 7 1959 154 165
5. C.G. Fonstad, and K.H. Rediker Electrical properties of high-quality stannic oxide crystals J. Appl. Phys. 42 1971 2911 2918
6. S. Samson, and C.G. Fonstad Defect structure and electronic donor levels in stannic oxide crystals J. Appl. Phys. 44 1973 4618 4621
7. 2 materials J. Electrochem. Soc. 123 1976 199C 205C
8. 2 J. Mater. Res. 8 1993 3131 3134
9. A. Vasiliev, R. Pavelko, S. Gogish-Klushin, D. Kharitonov, O. Gogish-Klushina, A. Pisliakov, A. Sokolov, N. Samotaev, V. Guarnieri, M. Zen, and L. Lorenzelli Sensors based on technology "nano-on-micro" for wireless instruments preventing ecological and industrial catastrophes M.I. Baraton, Sensors for Environment, Health and Security 2009 Springer Netherlands 205 228
10. A. A. Vasiliev. Physical-chemical principles of construction of gas sensors based on metal-oxides and metal/solid electrolyte/semiconductor structures. The thesis for a doctor's degree. Russian research center "Kurchatov Institute", Moscow, 2004.
11. D.F. Cox, and G.B. Hoflund An electronic and structural interpretation of tin oxide ELS spectra Surf. Sci. 151 1985 202 220
12. 2 J. Solid State Chem. 88 1990 443 450
13. 2 J. Phys. Chem. Solids 48 1987 171 180 (Pubitemid 17533467)
14. S. Matsushima, Y. Teraoka, N. Miura, and N. Yamazoe Electronic interaction between metal additives in tin dioxide based gas sensors Jpn. J. Appl. Phys. 27 1988 1798 1802
15. K. Button, C.G. Fonstad, and W. Dreybrodt Determination of the electron masses in stannic oxide by submillimeter cyclotron resonance Phys. Rev. B 4 1971 4539 4542
16. V.T. Agekyan Spectroscopic properties of semiconductor crystals with direct forbidden energy gap Phys. Stat. Solidi 43 1977 11 42 (Pubitemid 8566279)
17. T. Takeuchi, K. Shoji, T. Tadano, I. Doteshita, and S. Onodera Preparation of sub-nanometer thickness-controlled tin dioxide films by pulsed atomic-layer CVD Thin Solid Films 442 2003 98 101
18. J. Dutta, P. Roubeau, T. Emeraud, J.-M. Laurent, A. Smith, F. Leblanc, and J. Perrin Application of pyrosol deposition process for large-area deposition of fluorine-doped tin dioxide thin films Thin Solid Films 239 1994 150 155
19. 2 thin films based on conductance and Hall effect measurements J. Appl. Phys. 100 2006 033716 033725
20. J.W. Orton, and M.J. Powell The Hall effect in polycrystalline and powdered semiconductors Rep. Prog. Phys. 43 1980 1263 1308
21. J.Y.W. Seto The electrical properties of polycrystalline silicon films J. Appl. Phys. 46 1975 5247 5254
22. N. Yamazoe, and K. Shimanoe New perspectives of gas sensor technology Sens. Actuators B 138 2009 100 107
23. F.F. Volkenstein Chemisorption Electron Processes on the Surface of Semiconductors 1987 Nauka Moscow
24. V.F. Kiselev, and O.V. Krylov Electron Processes of Adsorption and Catalysis on the Semiconductors and Dielectrics 1979 Nauka Moscow
25. I.E. Tamm On the possible electron states on the crystal surface Physik. Zs. Sovjetunion 1 1932 733 743
26. W. Shockley On the surface states associated with a periodic potential Phys. Rev. 56 1939 317 323
27. S.G. Davison, and J.D. Levine Surface States 1970 Academic Press NY & London
28. J. Koutecky On the theory of surface states J. Phys. Chem. Sol. 14 1960 233 240
29. J. Koutecký, and M. Tomáshek Contribution to the theory of the Shockley surface states - I: General formulation and the case of zero deformation of the potential on the Goodwin-Artmann model J. Phys. Chem. Sol. 14 1960 241 247
30. 2(1 1 0)-1 × 1 surface Phys. Rev. B 38 1988 2072 2083
31. S. Sze Physics of Semiconductor Devices 1981 Wiley Publ. New York
32. P.B. Weisz Effects of electronic change transfer between adsorbate and solid on chemisorption and catalysis J. Chem. Phys. 21 1953 1531 1538
33. 2 thin film conductance Phys. Tech. Semiconductors 34 2000 314 317
34. N. Barsan, and U. Weimar Conduction model of metal oxide gas sensors J. Electroceram. 7 2001 143 167 (Pubitemid 34288261)
35. M.N. Rumyanceva, E.A. Makeeva, and A.M. Gaskov Influence of microstructure of semiconductor sensor materials on the oxygen chemisorptions on its surfaces Russ. Chem. Mag. 52 2008 122 129
36. 2 interaction; work function change and conductivity measurements Sens. Actuators B 118 2006 78 83 (Pubitemid 44287393)
37. 2: oxygen ionosorption and spectroscopic evidence for adsorbed oxygen Chem. Phys. Chem. 7 2006 2041 2052