On the origin of sensing properties of the nanodispersed layers of semiconducting metal oxide materials

Procedia Engineering

Volumn 5, Issue , 2010, Pages 9-12

  Zaretskiy, N P ^a   Menshikov, L I ^a   Vasiliev, A A ^a   Menshikov, P L ^a  

^a KURCHATOV INSTITUTE   (Russian Federation)

Author keywords

Fermi level; Gas sensors; Metal oxide semiconductor; Surface electron traps; Tamm states

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL SENSORS; ELECTRON TRAPS; ELECTRONS; FERMI LEVEL; GAS DETECTORS; METALS; MOS DEVICES; NANOCOMPOSITES; OXIDE SEMICONDUCTORS;

ELECTRONEGATIVE GAS; METAL OXIDE SEMICONDUCTOR; NANOPARTICLE DIAMETER; SEMI-CONDUCTING METAL OXIDES; SEMICONDUCTING MATERIALS; SURFACE ELECTRON; TAMM STATES; THREE ORDERS OF MAGNITUDE;

METALLIC COMPOUNDS;

EID: 78650615742     PISSN: None     EISSN: 18777058     Source Type: Conference Proceeding    
DOI: 10.1016/j.proeng.2010.09.035     Document Type: Conference Paper

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