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Volumn 135, Issue , 2013, Pages 160-163

Study on the luminescence properties of n-ZnO/i-NiO/n-GaN isotype heterojunction diodes

(9) Wang, Hui a,b Shi, Zhifeng a Zhang, Baolin a Wu, Guoguang a Wang, Jin a Zhao, Yang a Ma, Yan a Du, Guotong a Dong, Xin a

a JILIN UNIVERSITY (China)

b HENAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

Luminescence properties; MOCVD; NiO; ZnO

Indexed keywords

BAND DIAGRAMS; CURRENT-VOLTAGE MEASUREMENTS; INTENSITY RATIO; ISOTYPE HETEROJUNCTIONS; LUMINESCENCE PROPERTIES; NIO; ROOM TEMPERATURE; SUPERLINEAR; ULTRA-VIOLET LIGHT; ULTRAVIOLET EMISSION; VISIBLE EMISSIONS; ZNO;

ELECTRIC RECTIFIERS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; LUMINESCENCE; LUMINESCENCE OF INORGANIC SOLIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DIODES; ULTRAVIOLET RADIATION; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 84870168738 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/j.jlumin.2012.10.024 Document Type: Article

Times cited : (12)

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