Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing

Journal of Luminescence

Volumn 129, Issue 2, 2009, Pages 153-157

  Wen, Xiaoming ^a,b,c   Davis, J A ^c   Dao, L V ^c   Hannaford, P ^c   Coleman, V A ^d   Tan, H H ^d   Jagadish, C ^d   Koike, K ^e   Sasa, S ^e   Inoue, M ^e   Yano, M ^e  

^a YUNNAN UNIVERSITY   (China)

^b UNIVERSITY OF MELBOURNE   (Australia)

^c SWINBURNE UNIVERSITY OF TECHNOLOGY   (Australia)

^d AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^e OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ion implantation; Thermal photoluminescence quenching; ZnO ZnMgO multiple quantum wells

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ION BOMBARDMENT; ION IMPLANTATION; LIGHT EMISSION; LUMINESCENCE; MAGNESIUM; OXYGEN; PHOTOLUMINESCENCE; QUENCHING; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR QUANTUM WIRES; WELLS;

HIGH DOSES; LARGE DEFECTS; MAGNESIUM ATOMS; MULTIPLE QUANTUM WELLS; NONRADIATIVE CHANNELS; OXYGEN IMPLANTATIONS; POTENTIAL FLUCTUATIONS; QUANTUM WELLS; THERMAL PHOTOLUMINESCENCE QUENCHING; ZNO/ZNMGO; ZNO/ZNMGO MULTIPLE QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 55749098469     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2008.09.006     Document Type: Article

References (22)

1. Ozgur U., Alivov Y.I., Liu C., Teke A., Reshchikov M.A., Dogan S., Avrutin V., Cho S.J., and Morkoc H. J. Appl. Phys. 98 (2005) 041301
2. Makino T., Segawa Y., Kawasaki M., and Koinuma H. Semicond. Sci. Technol. 20 (2005) S78
3. Sun H.D., Segawa Y., Kawasaki M., Ohtomo A., Tamura K., and Koinuma H. J. Appl. Phys. 91 (2002) 6457
4. Sun H.D., Makino T., Segawa Y., Kawasaki M., Ohtomo A., Tamura K., and Koinuma H. J. Appl. Phys. 91 (2002) 1993
5. Gruber T., Kirchner C., Kling R., Reuss F., and Waag A. Appl. Phys. Lett. 84 (2004) 5359
6. Ohtomo A., Kawasaki M., Ohkubo I., Koinuma H., Yasuda T., and Segawa Y. Appl. Phys. Lett. 75 (1999) 980
7. Koike K., Hama K., Nakashima I., Sasa S., Inoue M., and Yano M. Jpn. J. Appl. Phys. 44 (2005) 3822
8. Kennedy J., Markwitz A., Li Z., Gao W., Kendrick C., Durbin S.M., and Reeves R. Curr. Appl. Phys. 6 (2006) 495
9. Zhong H.M., Chen X.S., Wang J.B., Xia C.S., Wang S.W., Li Z.F., Xu W.L., and Lu W. Acta Phys. Sin. 55 (2006) 2073
10. Sakaguchi I., Sato Y., Ryoken H., Hishita S., Ohashi N., and Haneda H. Jpn. J. Appl. Phys. 44 (2005) L1289
11. Coleman V.A., Buda M., Tan H.H., Jagadish C., Phillips M.R., Koike K., Sasa S., Inoue M., and Yano M. Semicond. Sci. Technol. 21 (2006) L25
12. Davis J.A., Dao L.V., Wen X.M., Ticknor C., Hannaford P., Coleman V.A., Tan H.H., Jagadish C., Koike K., Sasa S., Inoue M., and Yano M. Nanotechnology 19 (2008) 055205
13. Wen X.M., Davis J.A., Van Dao L., Hannaford P., Coleman V.A., Tan H.H., Jagadish C., Koike K., Sasa S., Inoue M., and Yano M. Appl. Phys. Lett. 90 (2007) 221914
14. Koida T., Uedono A., Tsukazaki A., Sota T., Kawasaki M., and Chichibu S.F. Phys. Status Solidi A 201 (2004) 2841
15. Chen Z.Q., Sekiguchi T., Yuan X.L., Maekawa M., and Kawasuso A. J. Phys. Condens. Matter 16 (2004) S293
16. Vijayakumar K.P., Kumar P.M.R., Kartha C.S., Wilson K.C., Singh F., Nair K.G.M., and Kashiwaba Y. Phys.. Status Solidi A 203 (2006) 860
17. Kucheyev S.O., Williams J.S., Jagadish C., Zou J., Evans C., Nelson A.J., and Hamza A.V. Phys. Rev. B 67 (2003) 094115
18. Chichibu S.F., Onuma T., Kubota M., Uedono A., Sota T., Tsukazaki A., Ohtomo A., and Kawasaki M. J. Appl. Phys. 99 (2006) 093505
19. Makino T., Segawa Y., and Kawasaki M. J. Appl. Phys. 97 (2005) 106111
20. Morhain C., Bretagnon T., Lefebvre P., Tang X., Valvin P., Guillet T., Gil B., Taliercio T., Teisseire-Doninelli M., Vinter B., and Deparis C. Phys. Rev. B 72 (2005) 241305
21. Makino T., Tamura K., Chia C.H., Segawa Y., Kawasaki M., Ohtomo A., and Koinuma H. J. Appl. Phys. 93 (2003) 5929
22. Cho Y.H., Gainer G.H., Fischer A.J., Song J.J., Keller S., Mishra U.K., and DenBaars S.P. Appl. Phys. Lett. 73 (1998) 1370