Charge transport mechanism in high conductivity undoped tin oxide thin films deposited by reactive sputtering

Thin Solid Films

Volumn 524, Issue , 2012, Pages 30-34

  Bansal, Shikha ^a   Pandya, Dinesh K ^a   Kashyap, Subhash C ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Activation energy; Conduction mechanism; Electrical properties; Hopping conduction; Reactive sputtering; Structural properties; Thin films; Tin dioxide

Indexed keywords

CHARGE TRANSPORT MECHANISMS; CONDUCTION MECHANISM; CONDUCTION PROCESS; CONDUCTION REGIME; HIGH CONDUCTIVITY; HIGH ELECTRICAL CONDUCTIVITY; HIGHER T; HOPPING CONDUCTION; LOW TEMPERATURES; POLYCRYSTALLINE; SUBSTRATE TEMPERATURE; TEMPERATURE RANGE; THERMALLY ACTIVATED; TIN OXIDE THIN FILM; VARIABLE-RANGE-HOPPING CONDUCTIONS;

ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; OXIDE FILMS; OXYGEN VACANCIES; REACTIVE SPUTTERING; STRUCTURAL PROPERTIES; THIN FILMS; TIN DIOXIDE; TIN OXIDES;

TIN;

EID: 84869496562     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.09.062     Document Type: Article

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