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Journal of Alloys and Compounds

Volumn 508, Issue 2, 2010, Pages 342-347

Influence of the oxygen pressure on the physical properties of the pulsed-laser deposited Te doped SnO2 thin films

(5) Chan Y Diaz E a Camacho, Juan M b Duarte Moller, A a Castro Rodriguez R b Bartolo Perez P b

a CENTRO DE INVESTIGACIÓN EN MATERIALES AVANZADOS (Mexico)

b DEPARTAMENTO DE FÍSICA APLICADA (Mexico)

Author keywords

Electro optical properties; Pulsed laser deposition; Tin oxide; Transparent conducting oxide

Indexed keywords

ANNEALED FILMS; AS-GROWN; AS-GROWN FILMS; BAND GAPS; CARRIER DENSITY; DIFFRACTION PEAKS; ELECTRICAL RESISTIVITY; ELECTROOPTICAL PROPERTIES; FIGURE OF MERIT; GLASS SUBSTRATES; HIGH TRANSMITTANCE; MINIMUM VALUE; OPTICAL TRANSMITTANCE; OXYGEN PRESSURE; TETRAGONAL STRUCTURE; TRANSPARENT CONDUCTING OXIDE;

ANNEALING; ATMOSPHERIC PRESSURE; CARRIER MOBILITY; DEPOSITION; DIFFRACTION; ELECTRIC CONDUCTIVITY; FILM PREPARATION; GLASS LASERS; OPACITY; OXYGEN; PHYSICAL PROPERTIES; PULSED LASER DEPOSITION; PULSED LASERS; SUBSTRATES; TELLURIUM; TELLURIUM COMPOUNDS; THIN FILMS; TIN; TIN OXIDES; TITANIUM COMPOUNDS;

OPTICAL FILMS;

EID: 77957885613 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.08.076 Document Type: Review

Times cited : (23)

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