Electrical properties and topography of SnO 2 thin films prepared by reactive sputtering

Applied Surface Science

Volumn 108, Issue 3, 1997, Pages 351-358

  Brousseau, J L ^a,b   Bourque, H ^a,b   Tessier, A ^a,b   Leblanc, R M ^a,b  

^a University of Miami   (United States)

^b UNIVERSITÉ DU QUÉBEC À TROIS RIVIÈRES   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; GRAIN SIZE AND SHAPE; MAGNETRON SPUTTERING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING TIN COMPOUNDS;

FILM RESISTIVITY; HALL MOBILITY; TIN OXIDE;

THIN FILMS;

EID: 0031103771     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00679-4     Document Type: Article

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